Qualified processes

Node

Voltage domains

Foundries

350nm HV

3.3V, 15V

TSMC

250nm BCD, generation I, II

12V, 24V, 40V, 60V

TSMC

180nm BCD, generation I, II

18V, 24V, 32V, 40V, 60V

TSMC, UMC, TowerJazz

180nm CMOS

1.8V, 3.3V, 5V

TSMC, UMC, Silterra

130nm CMOS

1.0V, 1.2V, 3.3V, 5V, 7V

TSMC, UMC, TowerJazz, HHGrace, Lfoundry

130nm SOI

1.8V, 2.5V, 3.3V, 5.0V

GF, ST

90nm CMOS

1.2V, 1.8V, 3.3V

TSMC, SMIC

65nm CMOS

1.0V, 1.2V, 1.8V, 2.5V, 3.3V, 5V

TSMC, UMC, GF

40nm CMOS

0.9V, 1.2V, 1.8V, 3.3V, 5V

TSMC

28nm CMOS

0.85V, 0.9V, 1.8V, 3.3V, 5V, 5.5V, 12V

TSMC, UMC

16nm FinFET

0.8V, 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, 5V

TSMC

White papers

Journal/Conference papers

  • 2012 Taiwan ESD conference paper on scaling trends
  • 2012 Taiwan ESD conference paper on Electrical Overstress
  • 2012 Taiwan ESD conference paper on Dynamic Avalanche
  • 2012 EETimes article: On-chip ESD protection for High Voltage applications in TSMC BCD technology
  • 2012 IC Journal article: SCR based on-chip ESD protection for LNA’s in 40nm CMOS
  • Taiwan ESD 2011 conference paper on ESD protection for TSMC BCD processes
  • Taiwan ESD 2011 conference invited paper on Overvoltage, failsafe, open drain
  • RCJ 2011 conference paper on the impact of 10 years of CMOS scaling on ESD
  • RCJ 2011 conference paper on 3.3V interfaces in 40nm and 28nm
  • TSMC OIP 2011 paper on ESD protection for TSMC BCD processes
  • EOS/ESD 2011 conference paper on 3.3V interfaces in 40nm
  • Taiwan ESD 2010 conference paper on ESD protection of LNA circuits
  • Taiwan ESD 2010 conference paper on ESD protection for high voltage
  • IEW 2010 workshop discussion on improved HHISCR devices
  • EOS/ESD 2010 conference paper on improved HHISCR devices
  • RCJ 2009 conference paper on ESD protection for HDMI interfaces
  • IEW 2009 workshop discussion on TakeCharge calculation tool
  • SOC 2008 conference publication on ESD challenges in Advanced CMOS
  • RCJ 2008 conference paper on improving SCR concepts - joint paper with OKI
  • RCJ 2008 conference paper on latch-up analysis - joint paper with NJR
  • IPSOC 2008 conference paper on the TakeCharge calculation tool
  • EOS/ESD 2008 conference paper on CDM analysis - joint paper with Fujitsu
  • EOS/ESD 2007 conference paper on transient analysis of SCR based protection concepts
  • RCJ 2006 conference paper on Very Fast TLP analysis techniques
  • JMR 2006 journal paper on ESD protection for high voltage technology
  • EOS/ESD 2006 conference paper on bulk coupled MOS in SOI
  • Taiwan ESD 2005 Keynote
  • TMDR 2005 journal paper on Diode Triggered SCR
  • RCJ 2005 conference paper on ESD solutions for EPI technology
  • ISCAS 2005 conference paper on Diode Triggered SCR
  • EOS/ESD 2005 conference paper on SCR porting to SOI
  • EOS/ESD 2005 conference paper on Current Triggered SCR
  • CICC 2005 conference paper on SCR protection concepts
  • EOS/ESD 2004 conference paper on ESD protection for high voltage technologies
  • CICC 2004 conference paper on Active Source Pumping
  • IEDM 2003 conference paper on Diode Triggered SCR
  • EOS/ESD 2003 conference paper on Active Area Segmentation
  • EOS/ESD 2002 conference paper on High Holding Current SCR
  • EOS/ESD 2001 conference paper on Multi Finger Triggering concepts
  • EOS/ESD 2001 conference paper on GGSCR
  • EOS/ESD 2000 conference paper on Back en Ballasting
    • Press releases

    • 2014 Sofics® wins industry significant award at the European Patent Office
    • 2014 Lantiq Licenses Sofics on-chip ESD Solutions
    • 2013 press release with ZMDI
    • 2012 press release with Arquimea
    • 2012 press release with RUAG
    • 2012 press release with ADI
    • 2012 press release with Anvo Systems
    • 2012 press release with Nvidia and ICsense
    • 2012 press release with DecaWave
    • 2012 press release on TSMC9000 achievements
    • 2012 press release with eSilicon on PowerQubic
    • 2011 press release with StarChip
    • 2011 press release with ICsense on cooperation achievements
    • 2010 press release with TSMC - PowerQubic license
    • 2009 press release on RCJ award
    • 2009 press release on ESDA awards
    • 2009 press release on Sofics changes
    • 2009 press release on the Management Buy Out
    • 2009 press release with Etesian
    • 2009 press release with UMC - new processes covered
    • 2008 press release on new ESD services
    • 2008 press release on TSMC 40nm solutions
    • 2008 press release on TSMC DCA partnership
    • 2008 press release with Toshiba
    • 2008 press release with Redmere
    • 2008 press release with Actel
    • 2007 press release on winning the Nippon export award
    • 2007 press release for Taiwan
    • 2007 press release with AMIS
    • 2007 press release at FSA
    • 2007 press release with Tower Semiconductor
    • 2007 press release about UMC IP alliance
    • 2006 press release with Fujitsu
    • 2006 press release with EPSON-SEIKO foundry
    • 2005 press release with Toshiba
    • 2005 press release with OKI
    • 2005 press release with EPSON-SEIKO
    • 2004 press release with Panasonic
    • 2004 press release with Renesas
    • 2004 press release with Ricoh
    • 2004 press release with Altera
    • 2004 press release with Toshiba
    • 2002 press release with NJR
      • Patents