On-chip ESD resolutions with proven process portability
Sofics has verified its on-chip ESD technology on more than 50 processes. Standard and customized solutions can thus be provided almost immediately.
|350nm HV||3.3V, 15V||TSMC|
|250nm BCD, generation I, II||12V, 24V, 40V, 60V||TSMC|
|180nm BCD, generation I, II||18V, 24V, 32V, 40V, 60V||TSMC, UMC, TowerJazz|
|180nm CMOS||1.8V, 3.3V, 5V||TSMC, UMC, Silterra|
|130nm CMOS||1.0V, 1.2V, 3.3V, 5V, 7V||TSMC, UMC, TowerJazz, HHGrace, Lfoundry|
|90nm CMOS||1.2V, 1.8V, 3.3V||TSMC, SMIC|
|65nm CMOS||1.0V, 1.2V, 1.8V, 2.5V, 3.3V, 5V||TSMC, UMC, GF|
|40nm CMOS||0.9V, 1.2V, 1.8V, 3.3V, 5V||TSMC|
|28nm CMOS||0.85V, 0.9V, 1.8V, 3.3V, 5V, 5.5V, 12V||TSMC, UMC|
|16nm FinFET||0.8V, 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, 5V||TSMC|
Our on-chip ESD technology is developed with portability as a main condition. Sofics plain-CMOS solutions have been ported to different foundries and process nodes in a few weeks.
If your company is an integrated device manufacturer (IDM) with its own fab, we can implement Sofics solutions in your process. Sofics has successfully customized and ported its ESD/EOS solutions to IDM processes in more than 35 technology transfer projects.
Find out how Sofics can help to pass your ESD, latch-up and/or EOS requirements. Provide us some information about your current project and receive our reply shortly.