32bartkeppens, Author at Sofics.com

Optimized ESD protection based on Silicon Controlled Rectifiers (SCR), verified on Samsung Foundry 4nm and 8nm FinFET processes

by 32bartkeppens
Posted on February 15, 2022
in ESD devices, ESD protection, ESD protection approaches, FinFET, Local clamp, SCR, SerDES, Silicon controlled rectifier

Engineers developing semiconductor devices in the most advanced FinFET technology need improved ESD protection solutions. We demonstrate ESD protection solutions based on proprietary Silicon Controlled Rectifiers verified on the Samsung Foundry 8nm and 4nm FinFET process.

by 32bartkeppens
Posted on February 2, 2022
in BCD technology, ESD design window, ESD devices, ESD protection, ESD protection approaches, ESD testing

For many years, IC designers coult count on the snapback behaviour of the ggNMOS device for ESD protection in mature CMOS nodes (180nm and below). However, for more advanced CMOS, FinFET, SOI and high voltage processes there are serious drawbacks.

by 32bartkeppens
Posted on January 19, 2022
in Aerospace, cold spare interface, Cold-spare, ESD protection, ESD protection approaches, Low leakage, Radiation hard electronics, Space

Space applications require custom I/O and ESD protection solutions. Sofics proprietary ESD technology has been used for a number of aerospace projects. Our engineers delivered custom rad-hard ESD devices for TSMC 28nm, 65nm and 130nm CMOS technologies. The cells enable low power design in an extended temperature range. Different concepts are used to enable cold-spare[...]

by 32bartkeppens
Posted on January 10, 2022
in 2.5D and 3D hybrid integration, ESD protection, ESD protection approaches, FinFET, SerDES, Silicon controlled rectifier

Semiconductor companies using 2.5D and 3D hybrid integration need to consider Electrostatic Discharge (ESD) protection early in the design, even for die-2-die interfaces that remain inside the package. There are several challenges but also opportunities. The use of a local ESD protection clamp at the TSV offers more robustness, higher performance, more flexibility, all in[...]

by 32bartkeppens
Posted on November 26, 2021
in ESD design window, ESD devices, ESD protection, ESD protection approaches, SOFICS

Koen Decock, ESD design specialist at Sofics, made a presentation for a full auditorium, organized by the local IEEE SSCS student chapter in Leuven. He talked about on-chip ESD protection, from the basic concepts to the more advanced applications.

by 32bartkeppens
Posted on November 23, 2021
in BCD technology, ESD devices, ESD protection, ESD protection approaches, High Voltage, PowerQubic, Zener

Some applications really need high voltage interfaces and circuits. Think about power management and power conversion chips, automotive electronics for engine control, LCD or OLED display driver chips, motor driver electronics and industrial applications. These high voltage applications require other ESD protection clamps compared to the clamps used for protection of low voltage circuits. Sofics[...]

by 32bartkeppens
Posted on September 23, 2021
in ESD devices, ESD protection, Low leakage, Silicon controlled rectifier, SOI, Wireless

The 22nm FDX process from GlobalFoundries is a great technology for various applications including low-power IoT on the edge, high-bandwidth 5G mmWave devices and automotive products, Since its market introduction, the SOI process technology receives a lot of attention because it combines unique features in one platform. At the 2021 GTC event, GlobalFoundries said thatContinue[...]

by 32bartkeppens
Posted on September 16, 2021
in ESD devices, ESD protection, ESD protection approaches, FinFET, Local clamp, Low capacitance ESD, SerDES, Silicon controlled rectifier, SOI

Semiconductor companies are developing ever faster interfaces to satisfy the need for higher data throughputs. However, the parasitic capacitance of the traditional ESD solutions limits the signal frequency. This paper demonstrates low-cap Analog I/Os for high speed SerDes (28Gbps to 112Gbps) circuits created in advanced BiCMOS, SOI and FinFET nodes.

by 32bartkeppens
Posted on July 14, 2021
in CEO, ESD protection, ESD protection approaches, Internet of things, IoT

What is the right ESD requirement for IoT applications? The internet of Things circuits are used in new environments. It is not possible to use the same reliability approaches for all the different applications. Sofics' CEO Koen Verhaege presented an overview and different cases.

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Author: 32bartkeppens

Optimized ESD protection based on Silicon Controlled Rectifiers (SCR), verified on Samsung Foundry 4nm and 8nm FinFET processes

Time to say farewell to the snapback ggNMOS for ESD protection

ESD protection solutions for space applications

Optimized Local I/O ESD Protection in FinFET Technology for 2.5D and 3D hybrid integration

Introduction about ESD protection: basic concepts to advanced applications

ESD clamps for high voltage, BCD processes

Optimized IP for GF’s 22nm FDX technology

Optimized Local I/O ESD Protection for SerDes In Advanced SOI, BiCMOS and FinFET Technology

ESD protection for Internet-of-Things (IoT)