SOI Archives

ESD basic: Silicon Control Rectifier (SCR)

by kverhaege
Posted on February 10, 2023
in DTSCR, dual diode, ESD protection, ESD protection approaches, FinFET, Local clamp, SCR, Silicon controlled rectifier, SOI

SCR intro: Silicon-controlled rectifiers (SCRs) are interesting devices that can be used for on-chip ESD protection, if (and only if) they are properly designed and biased. SCRs are used for high-speed/RF or low-capacitance, small area/high-performance ESD solutions in all CMOS technologies, including SOI and FinFET (down to 3nm today). SCR operation: Figure 1 introduces theContinue[...]

by Bart Keppens
Posted on August 9, 2022
in CMOS, DTSCR, ESD devices, ESD protection, FinFET, Local clamp, Low capacitance ESD, Optical communication, Paper, SCR, SerDES, SiGe BiCMOS, Silicon controlled rectifier, SOI, TakeCharge, Wired communication

Sofics' 2021 IEDS publication. Semiconductor companies are developing ever faster interfaces to satisfy the need for higher data throughputs. However, the parasitic capacitance of the traditional ESD solutions limits the signal frequency. This paper demonstrates low-cap Analog I/Os for high speed SerDes (28Gbps to 112Gbps) circuits created in advanced BiCMOS, SOI and FinFET nodes.

by 32bartkeppens
Posted on September 23, 2021
in ESD devices, ESD protection, Low leakage, Silicon controlled rectifier, SOI, Wireless

The 22nm FDX process from GlobalFoundries is a great technology for various applications including low-power IoT on the edge, high-bandwidth 5G mmWave devices and automotive products, Since its market introduction, the SOI process technology receives a lot of attention because it combines unique features in one platform. At the 2021 GTC event, GlobalFoundries said thatContinue[...]

by 32bartkeppens
Posted on September 16, 2021
in ESD devices, ESD protection, ESD protection approaches, FinFET, Local clamp, Low capacitance ESD, SerDES, Silicon controlled rectifier, SOI

Semiconductor companies are developing ever faster interfaces to satisfy the need for higher data throughputs. However, the parasitic capacitance of the traditional ESD solutions limits the signal frequency. This paper demonstrates low-cap Analog I/Os for high speed SerDes (28Gbps to 112Gbps) circuits created in advanced BiCMOS, SOI and FinFET nodes.

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ESD basic: Silicon Control Rectifier (SCR)

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