Low parasitic capacitance

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ESD clamps with low parasitic capacitance

Sofics technology has been applied for many different applications. Specifically for high-speed interfaces or high-bandwidth wireless applications the parasitic capacitance of the ESD cells need to be as low as possible.
Sofics solutions typically have 30% to 50% lower capacitance compared to the foundry solutions with the same ESD robustness.
ESD-parasitic-capacitance

Examples in different processes

Examples for different process nodes are shown below. This is just a subset of cells proven on silicon and in mass production.

All cells can be ported to other processes. The actual numbers (ESD robustness, leakage, capacitance, area) may vary slightly, also depending on the circuit to be protected, process, voltage level.

Mature CMOS (0.5um to 180nm)

Process Pad ESD robustness Parasitic capacitance
TSMC 180nm 1.8V I/O >5 kV HBM <300 fF
TSMC 180nm 5V I/O > 8 kV HBM 300 fF
TSMC 180nm 7V I/O > 2 kV HBM < 200 fF
TowerSemi 350nm 4.5V I/O > 8 kV HBM < 550 fF

Mainstream CMOS (130nm to 65nm)

Process Pad ESD robustness Parasitic capacitance
TSMC 130nm 1.2V I/O > 4 kV HBM < 100 fF
TSMC 130nm 1.2V I/O OVT > 2 kV HBM < 50 fF
UMC 130nm 1.2V I/O > 2 kV HBM < 150 fF
TSMC 90nm 3.3V I/O > 2kV HBM < 100 fF
TSMC 65nm 1.8V I/O > 4 kV HBM < 100 fF
TSMC 65nm 1.0V I/O > 3 kV HBM < 70 fF
GF 65nm 1.2V I/O > 2 kV HBM < 50 fF
GF 65nm 3.3V I/O > 2 kV HBM < 50 fF

Advanced CMOS (40nm to 22nm)

Process Pad ESD robustness Parasitic capacitance
TSMC 40nm 3.3V I/O > 5 kV HBM < 180 fF
TSMC 40nm 1.2V I/O > 4 kV HBM < 180 fF
TSMC 40nm 1.8V I/O > 2 kV HBM < 70 fF
TSMC 28nm 0.85V I/O > 2 kV HBM < 100 fF
TSMC 28nm 1.0V I/O > 100 V HBM <11 fF
TSMC 28nm 1V I/O > 200 V HBM < 15 fF
TSMC 28nm 1.5V I/O > 1 kV HBM < 60 fF
UMC 28nm 1.0V I/O > 1.5 kV HBM 65 fF
TSMC 22nm 0.8V I/O > 8 kV HBM < 500 fF

FinFET technology

Process Pad ESD robustness Parasitic capacitance
TSMC 16nm 1.0V I/O > 1 kV HBM < 80 fF
TSMC 16nm 1.0V I/O > 2 kV HBM 100 fF
TSMC 12nm 1.8V I/O > 3 kV HBM 300 fF
TSMC 7nm 0.9V I/O > 400 V HBM 50 fF
TSMC 7nm 0.9V I/O > 150 V HBM 15 fF
TSMC 7nm 0.9V I/O > 80 V HBM 10 fF
TSMC 6nm 0.9V I/O > 100V HBM 13 fF
TSMC 5nm 0.9V I/O > 1 kV HBM 90 fF
Samsung 4nm 1.2V I/O > 2 kV HBM 230 fF

SOI technology

Process Pad ESD robustness Parasitic capacitance
TSMC 130nm 1.2V I/O > 4 kV HBM < 100 fF
TSMC 130nm 1.2V I/O OVT > 2 kV HBM < 50 fF
UMC 130nm 1.2V I/O > 2 kV HBM < 150 fF
TSMC 90nm 3.3V I/O > 2kV HBM < 100 fF
TSMC 65nm 1.8V I/O > 4 kV HBM < 100 fF
TSMC 65nm 1.0V I/O > 3 kV HBM < 70 fF
GF 65nm 1.2V I/O > 2 kV HBM < 50 fF
GF 65nm 3.3V I/O > 2 kV HBM < 50 fF

BiCMOS technology

Process Pad ESD robustness Parasitic capacitance
GF 9HP 2.5V I/O > 2 kV HBM < 50 fF
GF 9HP 2.5V I/O > 200 V HBM < 10 fF
GF 9HP 2.5V I/O 500 V HBM < 10 fF

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