ESD protection approaches Archives

ESD basic: Silicon Control Rectifier (SCR)

by kverhaege
Posted on February 10, 2023
in DTSCR, dual diode, ESD protection, ESD protection approaches, FinFET, Local clamp, SCR, Silicon controlled rectifier, SOI

SCR intro: Silicon-controlled rectifiers (SCRs) are interesting devices that can be used for on-chip ESD protection, if (and only if) they are properly designed and biased. SCRs are used for high-speed/RF or low-capacitance, small area/high-performance ESD solutions in all CMOS technologies, including SOI and FinFET (down to 3nm today). SCR operation: Figure 1 introduces theContinue[...]

by kverhaege
Posted on January 26, 2023
in ESD protection, ESD protection approaches, ggnmos, Local clamp, power clamp

ggNMOS intro: For decades, a traditional workhorse device for ESD protection for standard applications in CMOS technology has been the grounded-gate NMOS device (ggNMOS). Nevertheless, we have been explaining the operation of this device countless times, including as recently as 3 weeks ago. So, it is time for a short blog article. The schematic ofContinue[...]

by Bart Keppens
Posted on May 27, 2022
in Automotive, CMOS, Display, EOS, ESD design window, ESD protection, ESD protection approaches, ESD testing, High Voltage, High voltage tolerance, IEC 61000-4-5, Local clamp, Over voltage tolerant, overvoltage tolerant, PowerQubic, TakeCharge

EOS, or Electrical Overstress, is any electrical stress that exceeds any of the specified absolute maximum ratings (AMR) of a product. It is important to discuss because many products are damaged this way. This article includes case studies and 3 approaches to handle those requests.

by Bart Keppens
Posted on May 18, 2022
in Automotive, CMOS, dual diode, ESD protection, ESD protection approaches, Ethernet, FinFET, High ESD or IEC 61000-4-2 robustness, High speed interfaces, Local clamp, Low capacitance ESD, SerDES, TakeCharge, Wired communication

In the past most Electronic Control Units (ECU) used CAN and LIN interfaces to connect to sensors, actuators and each other. However, the newest applications need (much) faster communication options. Gigabit automotive ethernet is pushed by many in the industry as the perfect solution. With its local ESD clamp approach, Sofics provides the best solution[...]

by tomako85
Posted on April 6, 2022
in ESD devices, ESD protection, ESD protection approaches, GPIO, IO, SOFICS, TSMC

Fabless semiconductor companies usually use third-party IP blocks when developing ICs. An important IP is on-chip ESD protection. Caution must be exercised in choosing the right ESD IP to avoid patent infringement and inefficient ESD clamps. Thomas Ako made a presentation about the IP selection process on the 2021 IP-SOC event in Grenoble in December 2021.

by Bart Keppens
Posted on March 29, 2022
in dual diode, ESD design window, ESD devices, ESD protection, ESD protection approaches, Local clamp, Secondary protection, Self-protected drivers

There are many different approaches to ensure effective ESD protection for integrated circuits. It is important to select the right approach for each interface and power domain. This article outlines the main options for Interface protection.

by 32bartkeppens
Posted on February 15, 2022
in ESD devices, ESD protection, ESD protection approaches, FinFET, Local clamp, SCR, SerDES, Silicon controlled rectifier

Engineers developing semiconductor devices in the most advanced FinFET technology need improved ESD protection solutions. We demonstrate ESD protection solutions based on proprietary Silicon Controlled Rectifiers verified on the Samsung Foundry 8nm and 4nm FinFET process.

by 32bartkeppens
Posted on February 2, 2022
in BCD technology, ESD design window, ESD devices, ESD protection, ESD protection approaches, ESD testing

For many years, IC designers coult count on the snapback behaviour of the ggNMOS device for ESD protection in mature CMOS nodes (180nm and below). However, for more advanced CMOS, FinFET, SOI and high voltage processes there are serious drawbacks.

by 32bartkeppens
Posted on January 19, 2022
in Aerospace, cold spare interface, Cold-spare, ESD protection, ESD protection approaches, Low leakage, Radiation hard electronics, Space

Space applications require custom I/O and ESD protection solutions. Sofics proprietary ESD technology has been used for a number of aerospace projects. Our engineers delivered custom rad-hard ESD devices for TSMC 28nm, 65nm and 130nm CMOS technologies. The cells enable low power design in an extended temperature range. Different concepts are used to enable cold-spare[...]

by 32bartkeppens
Posted on January 10, 2022
in 2.5D and 3D hybrid integration, ESD protection, ESD protection approaches, FinFET, SerDES, Silicon controlled rectifier

Semiconductor companies using 2.5D and 3D hybrid integration need to consider Electrostatic Discharge (ESD) protection early in the design, even for die-2-die interfaces that remain inside the package. There are several challenges but also opportunities. The use of a local ESD protection clamp at the TSV offers more robustness, higher performance, more flexibility, all in[...]

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ESD protection approaches

ESD basic: Silicon Control Rectifier (SCR)

ggNMOS (grounded-gated NMOS)

3 approaches to handle EOS ‘requirements’

Optimized on-chip ESD protection to enable high-speed Ethernet in cars.

Selecting custom ESD IP for your next IC

Introduction: ESD protection concepts for I/Os

Optimized ESD protection based on Silicon Controlled Rectifiers (SCR), verified on Samsung Foundry 4nm and 8nm FinFET processes

Time to say farewell to the snapback ggNMOS for ESD protection

ESD protection solutions for space applications

Optimized Local I/O ESD Protection in FinFET Technology for 2.5D and 3D hybrid integration

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