Silicon controlled rectifier Archives

ESD basic: Silicon Control Rectifier (SCR)

by kverhaege
Posted on February 10, 2023
in DTSCR, dual diode, ESD protection, ESD protection approaches, FinFET, Local clamp, SCR, Silicon controlled rectifier, SOI

SCR intro: Silicon-controlled rectifiers (SCRs) are interesting devices that can be used for on-chip ESD protection, if (and only if) they are properly designed and biased. SCRs are used for high-speed/RF or low-capacitance, small area/high-performance ESD solutions in all CMOS technologies, including SOI and FinFET (down to 3nm today). SCR operation: Figure 1 introduces theContinue[...]

by Bart Keppens
Posted on August 9, 2022
in CMOS, DTSCR, ESD devices, ESD protection, FinFET, Local clamp, Low capacitance ESD, Optical communication, Paper, SCR, SerDES, SiGe BiCMOS, Silicon controlled rectifier, SOI, TakeCharge, Wired communication

Sofics' 2021 IEDS publication. Semiconductor companies are developing ever faster interfaces to satisfy the need for higher data throughputs. However, the parasitic capacitance of the traditional ESD solutions limits the signal frequency. This paper demonstrates low-cap Analog I/Os for high speed SerDes (28Gbps to 112Gbps) circuits created in advanced BiCMOS, SOI and FinFET nodes.

Imagers and image processing ESD protection_cutour

by Bart Keppens
Posted on June 1, 2022
in 2.5D and 3D hybrid integration, 3D integration, CMOS, ESD design window, ESD protection, High voltage tolerance, Imagers, Local clamp, Low capacitance ESD, Silicon controlled rectifier, Wired communication

Today, you can find CMOS image sensors almost everywhere in consumer, automotive, health and security applications. There has been a lot of innovation to enable demanding requirements. The article provides a summary about the 3 main aspects that IC designers need to consider when selecting the ESD protection clamps for their image sensor projects.

by 32bartkeppens
Posted on February 15, 2022
in ESD devices, ESD protection, ESD protection approaches, FinFET, Local clamp, SCR, SerDES, Silicon controlled rectifier

Engineers developing semiconductor devices in the most advanced FinFET technology need improved ESD protection solutions. We demonstrate ESD protection solutions based on proprietary Silicon Controlled Rectifiers verified on the Samsung Foundry 8nm and 4nm FinFET process.

by 32bartkeppens
Posted on January 10, 2022
in 2.5D and 3D hybrid integration, ESD protection, ESD protection approaches, FinFET, SerDES, Silicon controlled rectifier

Semiconductor companies using 2.5D and 3D hybrid integration need to consider Electrostatic Discharge (ESD) protection early in the design, even for die-2-die interfaces that remain inside the package. There are several challenges but also opportunities. The use of a local ESD protection clamp at the TSV offers more robustness, higher performance, more flexibility, all in[...]

by 32bartkeppens
Posted on September 23, 2021
in ESD devices, ESD protection, Low leakage, Silicon controlled rectifier, SOI, Wireless

The 22nm FDX process from GlobalFoundries is a great technology for various applications including low-power IoT on the edge, high-bandwidth 5G mmWave devices and automotive products, Since its market introduction, the SOI process technology receives a lot of attention because it combines unique features in one platform. At the 2021 GTC event, GlobalFoundries said thatContinue[...]

by 32bartkeppens
Posted on September 16, 2021
in ESD devices, ESD protection, ESD protection approaches, FinFET, Local clamp, Low capacitance ESD, SerDES, Silicon controlled rectifier, SOI

Semiconductor companies are developing ever faster interfaces to satisfy the need for higher data throughputs. However, the parasitic capacitance of the traditional ESD solutions limits the signal frequency. This paper demonstrates low-cap Analog I/Os for high speed SerDes (28Gbps to 112Gbps) circuits created in advanced BiCMOS, SOI and FinFET nodes.

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Silicon controlled rectifier

ESD basic: Silicon Control Rectifier (SCR)

Optimized Local I/O ESD Protection for SerDes In Advanced SOI, BiCMOS and FinFET Technology

Selecting optimized ESD protection for CMOS image sensors

Optimized ESD protection based on Silicon Controlled Rectifiers (SCR), verified on Samsung Foundry 4nm and 8nm FinFET processes

Optimized Local I/O ESD Protection in FinFET Technology for 2.5D and 3D hybrid integration

Optimized IP for GF’s 22nm FDX technology

Optimized Local I/O ESD Protection for SerDes In Advanced SOI, BiCMOS and FinFET Technology

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Latest News

ESD protection for Internet-of-Things (IoT)

July 14, 2021

Optimized Local I/O ESD Protection for SerDes In Advanced SOI, BiCMOS and FinFET Technology

September 16, 2021

Optimized IP for GF’s 22nm FDX technology

September 23, 2021

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